πŸ”‹ SBT.mdb λ·°μ–΄
데이터 κΈ°μ€€: 2026-07-24 05:16:52

TB_TEST_ITEM

칩셋별 검사 ν•­λͺ©(μΈ‘μ • ν•­λͺ©) μ •μ˜

κΈ°λ³Έν‚€: CHIPSET_ID + ITEM_ID + TEST_CLASS_ID + ITEM_SEQ

검색 κ²°κ³Ό 3,798ν–‰ 쀑 2,901–2,950ν–‰ ν‘œμ‹œ (59/76 νŽ˜μ΄μ§€)
CHIPSET_ID πŸ”‘ ITEM_ID πŸ”‘ TEST_CLASS_ID πŸ”‘ ITEM_SEQ πŸ”‘ ITEM_NAME ITEM_UNIT CODE_TYPE UNION_ID BASIC_ID SUB_COMMAND CODE_DEFINE WRITE_ID WRITE_DATA CONVERT_VALUE TEMP_STORAGE MODIFY_PERSON MODIFY_DATE
81 (SEC) 4 1 4 Check Fast Charge mA U 3 0 03 3NN10000 0 β€” β€” 0 zan li 20110115152938
81 (SEC) 5 1 5 Check Fast Discharge mA U 4 0 04 3NN10000 0 β€” β€” 0 zan li 20110115153259
81 (SEC) 6 1 6 Pack Terminal Voltage mV B 0 43 00 20110000 0 β€” β€” 0 zan li 20110115154820
81 (SEC) 7 1 7 Pack IR mOhm B 0 47 00 20210000 0 β€” β€” 0 zan li 20110115153724
81 (SEC) 8 1 8 Final Pack IR mOhm B 0 47 00 20210000 0 β€” β€” 0 zan li 20110115153848
81 (SEC) 9 1 9 Final Pack Terminal Voltage mV B 0 43 00 20110000 0 β€” β€” 0 zan li 20110115154001
81 (SEC) 10 1 10 0 Current Check mA B 0 44 00 20010000 0 β€” β€” 0 zan li 20110115154429
81 (SEC) 11 1 11 Wake UP Off β€” B 0 23 1A 24160000 0 β€” β€” 0 zan li 20110116102349
81 (SEC) 12 1 12 Charge ON 1 β€” B 0 28 31 21060000 0 β€” β€” 0 zan li 20110116110919
81 (SEC) 13 1 13 Current 1 β€” B 0 44 00 20010000 0 β€” β€” 0 zan li 20110116110919
81 (SEC) 14 1 14 Charge Off 1 β€” B 0 27 30 21160000 0 β€” β€” 0 zan li 20110116110945
602 (BQ40Z551) 75 1 1 Manufacturing Status β€” U 12 0 0C 3NN20000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 2 1 2 Manufacturer Access(Operation Status) β€” U 13 0 0D 3NN10000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 76 1 3 Test100 β€” U 1 0 01 3NN10000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 4 1 4 Write H/P Barcode (HP) β€” U 4 0 04 3NN30000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 5 1 5 Pack Manufacture Date β€” B 0 6 1B 01640000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 6 1 6 Pack Serial Number β€” B 0 6 1C 01510000 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 7 1 7 PCM Manufacture Date β€” B 0 7 70 02642602 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 8 1 8 PCM Serial Number β€” B 0 7 70 02512802 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 9 1 9 RSOC(Learning RSOC) % B 0 6 0D 01510000 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 10 1 10 Write RSOC for IATA β€” U 21 0 15 3NN10000 0 β€” β€” 0 1 20190803153431
602 (BQ40Z551) 11 1 11 Read RSOC for IATA % B 0 6 0D 01510000 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 12 1 12 PCM Connector Vendor ID β€” B 0 7 70 02121702 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 13 1 13 PCM H/W Version β€” B 0 7 70 02121902 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 14 1 14 PCM DF Version β€” B 0 7 70 02122102 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 15 1 15 PCM Manufacturer ID β€” B 0 7 70 02102301 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 16 1 16 PCM Reserved Value β€” B 0 7 70 02102402 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 17 1 17 Pack Manufacturer Name β€” B 0 7 20 02000000 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 18 1 18 Device Name β€” B 0 7 21 02000000 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 19 1 19 Current Accuracy (Zero) mA B 0 6 0a 01200000 0 β€” β€” 0 1 20180413161014
602 (BQ40Z551) 20 1 20 RTC Voltage Check V U 15 0 0F 3NN10000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 21 1 21 B/I Resistance Check mOhm U 16 0 10 3NN10000 0 β€” β€” 0 1 20200114092126
602 (BQ40Z551) 22 1 22 Temperature (Ref) ΒΊC B 0 48 00 20440000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 23 1 23 Temperature (Pack) ΒΊC U 14 0 0E 3NN40000 0 β€” β€” 0 PK 20180413161014
602 (BQ40Z551) 24 1 24 IR Pack mOhm B 0 47 00 20210000 0 β€” β€” 0 PK 20180413161014
8 (RAJ240080) 75 1 18 Temperature (Ref) 'C B 0 48 00 20410000 0 β€” β€” 0 wenqi bian 20120622162457
8 (RAJ240080) 76 1 19 Temperature (BMU) 'C U 20 0 13 3NN40000 0 β€” β€” 0 wenqi bian 20111108150503
8 (RAJ240080) 77 1 20 Temperature (Pack) 'C U 19 0 12 3NN40000 0 β€” β€” 0 wenqi bian 20111108150503
8 (RAJ240080) 78 1 21 FET Charge On(SI) β€” B 0 26 21 21060000 0 β€” β€” 0 LIM 20140311170339
8 (RAJ240080) 79 1 22 FET Charge Off(SI) β€” B 0 25 20 21160000 0 β€” β€” 0 LIM 20140311170339
8 (RAJ240080) 80 1 23 FET Discharge On(SI) β€” B 0 36 21 22060000 0 β€” β€” 0 LIM 20140311170339
8 (RAJ240080) 81 1 24 FET Discharge Off(SI) β€” B 0 35 20 22160000 0 β€” β€” 0 LIM 20140311170339
8 (RAJ240080) 82 1 25 Mid Tab Test mV U 22 0 15 3NN10000 0 β€” β€” 0 wenqi bian 20111108150503
8 (RAJ240080) 83 1 26 FCC (10mWh) mWh U 23 0 16 3NN10000 0 β€” β€” 0 wenqi bian 20111108150503
8 (RAJ240080) 84 1 27 Write Device Name (DELL) β€” U 21 0 14 3NN60000 0 β€” β€” 0 wenqi bian 20111108150503
8 (RAJ240080) 85 1 28 Pack Device Name β€” B 0 7 21 02030000 0 β€” β€” 0 wenqi bian 20111108150503
8 (RAJ240080) 86 1 29 System Reset β€” B 0 9 80 11160000 0 0001 β€” 0 LeeYW 20100528190743
8 (RAJ240080) 33 1 29 Battery Temp β€” B 0 1 FF 11160000 0 β€” β€” 0 LDNghia 20170523174220
8 (RAJ240080) 87 1 30 Wake Up On β€” B 0 24 1B 21060000 0 β€” β€” 0 LeeYW 20100529133024
8 (RAJ240080) 88 1 31 Wake Up Off β€” B 0 23 1A 21160000 0 β€” β€” 0 LeeYW 20100529133024