πŸ”‹ SBT.mdb λ·°μ–΄
데이터 κΈ°μ€€: 2026-07-24 05:16:52

TB_TEST_ITEM

칩셋별 검사 ν•­λͺ©(μΈ‘μ • ν•­λͺ©) μ •μ˜

κΈ°λ³Έν‚€: CHIPSET_ID + ITEM_ID + TEST_CLASS_ID + ITEM_SEQ

검색 κ²°κ³Ό 3,798ν–‰ 쀑 1,101–1,150ν–‰ ν‘œμ‹œ (23/76 νŽ˜μ΄μ§€)
CHIPSET_ID πŸ”‘ ITEM_ID πŸ”‘ TEST_CLASS_ID πŸ”‘ ITEM_SEQ πŸ”‘ ITEM_NAME ITEM_UNIT CODE_TYPE UNION_ID BASIC_ID SUB_COMMAND CODE_DEFINE WRITE_ID WRITE_DATA CONVERT_VALUE TEMP_STORAGE MODIFY_PERSON MODIFY_DATE
281 (BQ30420C(EEPROM 0x63)) 22 1 20 Temperature(Ref) 'C B 0 48 00 20410000 0 β€” β€” 0 LIM 20140308162836
281 (BQ30420C(EEPROM 0x63)) 23 1 21 Voltage Pack(DVM) mV B 0 43 00 20110000 0 β€” β€” 5 LIM 20140308162836
281 (BQ30420C(EEPROM 0x63)) 24 1 22 Write Manufacturer Access(0000) hex B 0 9 00 11160000 0 0000 β€” 0 LIM 20140308162836
281 (BQ30420C(EEPROM 0x63)) 25 1 23 Voltage CHA (Bank 1) mV B 0 6 3B 01360000 0 β€” β€” 11 wenqi bian 20130428155918
281 (BQ30420C(EEPROM 0x63)) 26 1 24 Voltage CHA (Bank 2) mV B 0 6 3A 01360000 0 β€” β€” 12 wenqi bian 20130428155918
281 (BQ30420C(EEPROM 0x63)) 27 1 25 Voltage CHA (Bank 3) mV B 0 6 39 01360000 0 β€” β€” 13 wenqi bian 20130428155918
281 (BQ30420C(EEPROM 0x63)) 101 1 26 Voltage CHA (Bank 4) mV B 0 6 38 01360000 0 β€” β€” 14 wenqi bian 20130428155918
281 (BQ30420C(EEPROM 0x63)) 28 1 27 Voltage DCHA(Bank 1) mV B 0 6 3B 01360000 0 β€” β€” 16 LIM 20140308162836
281 (BQ30420C(EEPROM 0x63)) 29 1 28 Voltage DCHA(Bank 2) mV B 0 6 3A 01360000 0 β€” β€” 17 LIM 20140308162836
281 (BQ30420C(EEPROM 0x63)) 30 1 29 Voltage DCHA(Bank 3) mV B 0 6 39 01360000 0 β€” β€” 18 LIM 20140308162836
281 (BQ30420C(EEPROM 0x63)) 102 1 30 Voltage DCHA(Bank 4) mV B 0 6 38 01360000 0 β€” β€” 19 LIM 20140308162836
281 (BQ30420C(EEPROM 0x63)) 31 1 31 Delay ms B 0 20 00 40N60000 0 β€” β€” 0 zan li 20120509150803
281 (BQ30420C(EEPROM 0x63)) 32 1 32 Temperature(Pack) 'C U 13 0 0D 3NN40000 0 β€” β€” 0 LIM 20140308162852
281 (BQ30420C(EEPROM 0x63)) 33 1 33 Voltage Accuracy(DVM - SMBus) mV U 10 0 0A 3NN10000 0 β€” β€” 0 LIM 20140308162852
281 (BQ30420C(EEPROM 0x63)) 34 1 34 Voltage Deviation(MaxV - MinV) mV U 11 0 0B 3NN10000 0 β€” β€” 0 LIM 20140308162852
281 (BQ30420C(EEPROM 0x63)) 35 1 35 Current Accuracy(CHA) mA U 14 0 0E 3NN10000 0 β€” β€” 0 LIM 20140308181722
281 (BQ30420C(EEPROM 0x63)) 36 1 36 Mid Tab Test mV U 12 0 0C 3NN10000 0 β€” β€” 0 zan li 20120509150803
281 (BQ30420C(EEPROM 0x63)) 37 1 37 Enable System(DELL) β€” B 0 9 7A 11160000 6 β€” β€” 0 LIM 20140308162905
281 (BQ30420C(EEPROM 0x63)) 38 1 38 Check E2P Data β€” B 0 3 01 4NN60000 0 β€” β€” 0 zan li 20120509150803
281 (BQ30420C(EEPROM 0x63)) 39 1 39 Current Accuracy(DCHA) mA U 15 0 0F 3NN10000 0 β€” β€” 0 LIM 20140308181722
281 (BQ30420C(EEPROM 0x63)) 40 1 40 System Present On β€” B 0 72 21 4NN60000 0 β€” β€” 0 zan li 20120509150803
281 (BQ30420C(EEPROM 0x63)) 41 1 41 System Present Off β€” B 0 71 20 4NN60000 0 β€” β€” 0 zan li 20120509150803
281 (BQ30420C(EEPROM 0x63)) 105 1 42 FET CDP (off,off,on)_CHA mA U 18 0 10 3NN10000 0 β€” β€” 0 LIM 20140308163633
281 (BQ30420C(EEPROM 0x63)) 107 1 43 IR Connector T-Pin Ohm B 0 46 00 20310000 0 β€” β€” 0 yueyue hao 20130320170119
281 (BQ30420C(EEPROM 0x63)) 108 1 44 Write Pack Confi(8200) β€” B 0 9 2F 11160000 0 8200 β€” 0 LIM 20140308163615
281 (BQ30420C(EEPROM 0x63)) 109 1 45 Write Pack Confi(8300) β€” B 0 9 2F 11160000 0 8300 β€” 0 LIM 20140308163648
281 (BQ30420C(EEPROM 0x63)) 110 1 46 Write Pack Confi(8700) β€” B 0 9 2F 11160000 0 8700 β€” 0 LIM 20140308180853
281 (BQ30420C(EEPROM 0x63)) 111 1 47 Write Pack Confi(8600) β€” B 0 9 2F 11160000 0 8600 β€” 0 LIM 20140308180853
281 (BQ30420C(EEPROM 0x63)) 112 1 48 Clear Cycle Count β€” B 0 9 17 11160000 0 0000 β€” 0 LIM 20140308180916
281 (BQ30420C(EEPROM 0x63)) 113 1 49 Current Sum mA U 19 0 11 3NN10000 0 β€” β€” 6 LIM 20140308183010
281 (BQ30420C(EEPROM 0x63)) 114 1 50 Bank1 IR mOhm U 20 0 12 3NN10000 0 β€” β€” 7 LIM 20140308183002
281 (BQ30420C(EEPROM 0x63)) 115 1 51 Bank2 IR mOhm U 21 0 13 3NN10000 0 β€” β€” 8 LIM 20140308183002
281 (BQ30420C(EEPROM 0x63)) 116 1 52 Bank3 IR mOhm U 22 0 14 3NN10000 0 β€” β€” 9 LIM 20140308183002
281 (BQ30420C(EEPROM 0x63)) 117 1 53 Bank4 IR mOhm U 23 0 15 3NN10000 0 β€” β€” 10 LIM 20140308183002
281 (BQ30420C(EEPROM 0x63)) 118 1 54 Mid Tab Test D mOhm U 24 0 16 3NN10000 0 β€” β€” 0 LIM 20140308183038
341 (BQ20Z65) 1 2 1 Maunfacturer Access hex B 0 6 00 01100000 0 β€” β€” 0 wenqi bian 20111213164838
341 (BQ20Z65) 2 2 2 RCA 10mWh B 0 6 01 01510000 0 β€” β€” 0 LIM 20140311095059
341 (BQ20Z65) 3 2 3 RTA min B 0 6 02 01510000 0 β€” β€” 0 LIM 20140311095059
341 (BQ20Z65) 4 2 4 Battery Mode hex B 0 6 03 01100000 0 β€” β€” 0 LeeYW 20100529160802
341 (BQ20Z65) 5 2 5 AtRate mA B 0 6 04 01510000 0 β€” β€” 0 LeeYW 20100529160802
341 (BQ20Z65) 6 2 6 AtRate Time To Full min B 0 6 05 01510000 0 β€” β€” 0 wenqi bian 20111213164838
341 (BQ20Z65) 7 2 7 AtRate Time To Empty min B 0 6 06 01510000 0 β€” β€” 0 wenqi bian 20111213164838
341 (BQ20Z65) 8 2 8 AtRate OK β€” B 0 6 07 01100000 0 β€” β€” 0 wenqi bian 20111213164838
341 (BQ20Z65) 9 2 9 Temperature 'C B 0 6 08 01410000 0 β€” β€” 0 LeeYW 20100529160802
341 (BQ20Z65) 10 2 10 Voltage mV B 0 6 09 01310000 0 β€” β€” 0 LIM 20140311093041
341 (BQ20Z65) 12 2 11 Average Current mA B 0 6 0B 01210000 0 β€” β€” 0 LeeYW 20100529160802
341 (BQ20Z65) 13 2 12 Max Error % B 0 6 0C 01510000 0 β€” β€” 0 LeeYW 20100529160802
341 (BQ20Z65) 14 2 13 RSOC % B 0 6 0D 01510000 0 β€” β€” 0 wenqi bian 20120605154359
341 (BQ20Z65) 16 2 14 RC mAh B 0 6 0F 01510000 0 β€” β€” 0 LIM 20140311095128
341 (BQ20Z65) 17 2 15 FCC (mAh) mAh B 0 6 10 01510000 0 β€” β€” 0 LIM 20140311095128