πŸ”‹ SBT.mdb λ·°μ–΄
데이터 κΈ°μ€€: 2026-07-24 05:16:52

πŸ› οΈ Mid-Tab 볡합 λͺ…λ Ή νŽΈμ§‘κΈ° ν™”λ©΄ μž¬ν˜„

μ‹€μ œ μ„€μ • ν”„λ‘œκ·Έλž¨μ˜ 볡합(μ‘°ν•©) λͺ…λ Ή λͺ©λ‘ + Basic Code 상세 화면을 DB κ°’ κ·ΈλŒ€λ‘œ μž¬κ΅¬μ„±ν•œ ν™”λ©΄μž…λ‹ˆλ‹€. Write κ°€μ΄λ“œμ—μ„œ μ„€μ • 방법을 ν™•μΈν•˜μ„Έμš”.

볡합 λͺ…λ Ή λͺ©λ‘ TB_UNION_CODE_MST Β· μΉ©μ…‹ 281

#UNION_ID이름Hexλͺ…λ Ήμˆ˜μ“°κΈ°μˆ˜λ³€ν™˜μ‹μˆ˜μ •μΌ
1 1 FET CD(on.off)_DCHA 01 3 2 β€” 20140308163040
2 2 FET CD(on.off)_CHA 02 3 2 β€” 20140308163040
3 3 FET CD(off.on)_CHA 03 3 2 β€” 20140308163040
4 4 FET CD(off.on)_DCHA 04 3 2 β€” 20140308163040
5 5 PF Detection Check 05 6 5 β€” 20111206110255
6 6 Seal 06 2 1 β€” 20111206110342
7 7 UnSeal 07 4 4 β€” 20111206110416
8 8 Write Device Name 08 5 4 β€” 20111206110442
9 9 Write PPID Info 09 5 4 β€” 20111206110538
10 10 Voltage Accuracy(DVM-SMBus) 0A 2 0 #(1,2) 20140308163059
11 11 Voltage Deviation(MaxV-MinV) 0B 4 0 #(1,2,3,4) 20140308163247
12 12 Mid-Tab 0C 1 0 MIDTAB(11,12,13,14,15,16,17,18,19,20) 20111206110841
13 13 Temperature(Pack) 0D 2 0 J(1)(2) 20140308163305
14 14 Current Accuracy(CHA) 0E 2 1 β€” 20140308163407
15 15 Current Accuracy(DCHA) 0F 2 1 β€” 20140308163401
16 18 FET CDP(off.off.on)_CHA 10 3 2 β€” 20140308163507
17 19 Current Sum 11 2 0 -(1,2) 20140308181051
18 20 Bank1 IR 12 3 0 *(/(#(1,2),3),(?1000)) 20140308181451
19 21 Bank2 IR 13 3 0 *(/(#(1,2),3),(?1000)) 20140308181451
20 22 Bank3 IR 14 3 0 *(/(#(1,2),3),(?1000)) 20140308181451
21 23 Bank4 IR 15 3 0 *(/(#(1,2),3),(?1000)) 20140308181451
22 24 Bank IR Difference 16 4 0 #(1,2,3,4) 20140308181506

Basic Code (상세 μŠ€ν…) TB_UNION_CODE_DTL Β· #12 Mid-Tab

순번Basic CodeCmdAddr ClassUnitTypeJudge DataPlaceSizeμˆ˜ν–‰(ACTION_YN)λ³€ν™˜μ‹
1 [52] Echo 8C 00 4Other Nν•΄λ‹Ήμ—†μŒ Nν•΄λ‹Ήμ—†μŒ 1미확인 β€” 00 00 Y β€”

μ‹€μ œ ν™”λ©΄Β·λ°μ΄ν„°λ‘œ ν™•μΈλœ κ°’    데이터 μƒκ΄€κ΄€κ³„λ‘œ μΆ”μ •ν•œ κ°’ (λ―Έν™•μ •)    아직 의미λ₯Ό ν™•μΈν•˜μ§€ λͺ»ν•œ κ°’