πŸ”‹ SBT.mdb λ·°μ–΄
데이터 κΈ°μ€€: 2026-07-24 05:16:52

TB_TEST_ITEM

칩셋별 검사 ν•­λͺ©(μΈ‘μ • ν•­λͺ©) μ •μ˜

κΈ°λ³Έν‚€: CHIPSET_ID + ITEM_ID + TEST_CLASS_ID + ITEM_SEQ

검색 κ²°κ³Ό 3,798ν–‰ 쀑 301–350ν–‰ ν‘œμ‹œ (7/76 νŽ˜μ΄μ§€)
CHIPSET_ID πŸ”‘ ITEM_ID πŸ”‘ TEST_CLASS_ID πŸ”‘ ITEM_SEQ πŸ”‘ ITEM_NAME ITEM_UNIT CODE_TYPE UNION_ID BASIC_ID SUB_COMMAND CODE_DEFINE WRITE_ID WRITE_DATA CONVERT_VALUE TEMP_STORAGE MODIFY_PERSON MODIFY_DATE
181 (BQ30420B(EEPROM 0x64)) 115 2 25 Pack Manufacturer Name β€” B 0 7 20 02100000 0 β€” β€” 0 LIM 20140308164537
181 (BQ30420B(EEPROM 0x64)) 116 2 26 Pack Device Name β€” B 0 7 21 02100000 0 β€” β€” 0 LIM 20140308164655
181 (BQ30420B(EEPROM 0x64)) 117 2 27 Pack Manufacturer Data β€” B 0 7 23 02100000 0 β€” β€” 0 LIM 20140308164758
181 (BQ30420B(EEPROM 0x64)) 79 2 28 Voltage(Bank 4) mV B 0 6 38 01310000 0 β€” β€” 4 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 80 2 29 Voltage(Bank 3) mV B 0 6 39 01310000 0 β€” β€” 3 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 81 2 30 Voltage(Bank 2) mV B 0 6 3A 01310000 0 β€” β€” 2 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 82 2 31 Voltage(Bank 1) mV B 0 6 3B 01310000 0 β€” β€” 1 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 85 2 32 PCM Manufacturer ID ascii B 0 7 23 02061202 0 β€” β€” 0 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 86 2 33 Checksum(F/W) hex B 0 7 79 02100102 0 β€” β€” 0 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 87 2 34 Check Pack Status hex B 0 6 2F 00100000 0 β€” β€” 0 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 88 2 35 Pack Configuration hex B 0 6 2F 00100100 0 β€” β€” 0 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 104 2 36 Current Accuracy(Zero) mA B 0 6 0A 01210000 0 β€” β€” 0 LIM 20140308164751
181 (BQ30420B(EEPROM 0x64)) 1 1 1 FET CD (on,off)_DCHA mA U 1 0 01 3NN10000 0 β€” β€” 0 wenqi bian 20111125090811
181 (BQ30420B(EEPROM 0x64)) 2 1 2 FET CD (on,off)_CHA mA U 2 0 02 3NN10000 0 β€” β€” 0 wenqi bian 20111108105207
181 (BQ30420B(EEPROM 0x64)) 3 1 3 FET CD (off,on)_CHA mA U 3 0 03 3NN10000 0 β€” β€” 0 wenqi bian 20111125090811
181 (BQ30420B(EEPROM 0x64)) 4 1 4 FET CD (off,on)_DCHA mA U 4 0 04 3NN10000 0 β€” β€” 0 wenqi bian 20111108105207
181 (BQ30420B(EEPROM 0x64)) 5 1 5 Fuse Blow Test num U 5 0 05 3NN10000 0 β€” β€” 0 wenqi bian 20111108105207
181 (BQ30420B(EEPROM 0x64)) 6 1 6 Seal β€” U 6 0 06 3NN60000 0 β€” β€” 0 wenqi bian 20111026153846
181 (BQ30420B(EEPROM 0x64)) 7 1 7 Unseal β€” U 7 0 07 3NN60000 0 β€” β€” 0 wenqi bian 20111026153846
181 (BQ30420B(EEPROM 0x64)) 8 1 8 Write Device Name (DELL) β€” U 8 0 08 3NN30000 0 β€” β€” 0 wenqi bian 20111108105207
181 (BQ30420B(EEPROM 0x64)) 9 1 9 Write PPID Barcode (DELL) ascii U 9 0 09 3NN30000 0 β€” β€” 0 wenqi bian 20111108105207
181 (BQ30420B(EEPROM 0x64)) 12 1 10 FET Charge On(SI) β€” B 0 26 21 21060000 0 β€” β€” 0 LIM 20140308154250
181 (BQ30420B(EEPROM 0x64)) 13 1 11 FET Charge Off(SI) β€” B 0 25 20 21160000 0 β€” β€” 0 LIM 20140308154250
181 (BQ30420B(EEPROM 0x64)) 14 1 12 FET Discharge On(SI) β€” B 0 36 21 22060000 0 β€” β€” 0 LIM 20140308154250
181 (BQ30420B(EEPROM 0x64)) 15 1 13 FET Discharge Off(SI) β€” B 0 35 20 22160000 0 β€” β€” 0 LIM 20140308154250
181 (BQ30420B(EEPROM 0x64)) 16 1 14 Charge On(Condition 1SI) β€” B 0 28 31 21060000 0 β€” β€” 0 LIM 20140308154407
181 (BQ30420B(EEPROM 0x64)) 17 1 15 Charge Off(Condition 1SI) β€” B 0 27 30 21160000 0 β€” β€” 0 LIM 20140308154407
181 (BQ30420B(EEPROM 0x64)) 18 1 16 DisCharge On(Condition 1SI) β€” B 0 38 31 22060000 0 β€” β€” 0 LIM 20140308154407
181 (BQ30420B(EEPROM 0x64)) 19 1 17 DisCharge Off(Condition 1SI) β€” B 0 37 30 22160000 0 β€” β€” 0 LIM 20140308154407
181 (BQ30420B(EEPROM 0x64)) 20 1 18 Write Manufacturer Access(0800) hex B 0 9 00 11160000 0 0008 β€” 0 LIM 20140308154417
181 (BQ30420B(EEPROM 0x64)) 21 1 19 IR Pack mOhm B 0 47 00 20210000 0 β€” β€” 0 wenqi bian 20111108105207
181 (BQ30420B(EEPROM 0x64)) 22 1 20 Temperature(Ref) 'C B 0 48 00 20410000 0 β€” β€” 0 LIM 20140308154510
181 (BQ30420B(EEPROM 0x64)) 23 1 21 Voltage Pack(DVM) mV B 0 43 00 20110000 0 β€” β€” 5 LIM 20140308154510
181 (BQ30420B(EEPROM 0x64)) 24 1 22 Write Manufacturer Access(0000) hex B 0 9 00 11160000 0 0000 β€” 0 LIM 20140308154510
181 (BQ30420B(EEPROM 0x64)) 25 1 23 Voltage CHA(Bank 1) mV B 0 6 3B 01360000 0 β€” β€” 11 LIM 20140308154645
181 (BQ30420B(EEPROM 0x64)) 26 1 24 Voltage CHA(Bank 2) mV B 0 6 3A 01360000 0 β€” β€” 12 LIM 20140308154645
181 (BQ30420B(EEPROM 0x64)) 27 1 25 Voltage CHA(Bank 3) mV B 0 6 39 01360000 0 β€” β€” 13 LIM 20140308154645
181 (BQ30420B(EEPROM 0x64)) 102 1 26 Voltage CHA(Bank 4) mV B 0 6 38 01360000 0 β€” β€” 14 wenqi bian 20130428155819
181 (BQ30420B(EEPROM 0x64)) 28 1 27 Voltage DCHA(Bank 1) mV B 0 6 3B 01360000 0 β€” β€” 16 LIM 20140308154645
181 (BQ30420B(EEPROM 0x64)) 29 1 28 Voltage DCHA(Bank 2) mV B 0 6 3A 01360000 0 β€” β€” 17 LIM 20140308154645
181 (BQ30420B(EEPROM 0x64)) 30 1 29 Voltage DCHA(Bank 3) mV B 0 6 39 01360000 0 β€” β€” 18 LIM 20140308154645
181 (BQ30420B(EEPROM 0x64)) 103 1 30 Voltage DCHA(Bank 4) mV B 0 6 38 01360000 0 β€” β€” 19 wenqi bian 20130428155819
181 (BQ30420B(EEPROM 0x64)) 31 1 31 Delay ms B 0 20 00 40N60000 0 β€” β€” 0 zan li 20120509150414
181 (BQ30420B(EEPROM 0x64)) 32 1 32 Temperature(Pack) 'C U 13 0 0D 3NN40000 0 β€” β€” 0 LIM 20140308154820
181 (BQ30420B(EEPROM 0x64)) 33 1 33 Voltage Accuracy(DVM - SMBus) mV U 10 0 0A 3NN10000 0 β€” β€” 0 LIM 20140308154820
181 (BQ30420B(EEPROM 0x64)) 34 1 34 Voltage Deviation(MaxV - MinV) mV U 11 0 0B 3NN10000 0 β€” β€” 0 LIM 20140308154820
181 (BQ30420B(EEPROM 0x64)) 35 1 35 Current Accuracy (CHA) mA U 14 0 0E 3NN10000 0 β€” β€” 0 LIM 20140308161232
181 (BQ30420B(EEPROM 0x64)) 36 1 36 Mid Tab Test mV U 12 0 0C 3NN10000 0 β€” β€” 0 zan li 20120509150414
181 (BQ30420B(EEPROM 0x64)) 37 1 37 Enable System(DELL) β€” B 0 9 7A 11160000 6 β€” β€” 0 LIM 20140308154820
181 (BQ30420B(EEPROM 0x64)) 38 1 38 Check E2P Data β€” B 0 3 01 4NN60000 0 β€” β€” 0 zan li 20120509150414