πŸ”‹ SBT.mdb λ·°μ–΄
데이터 κΈ°μ€€: 2026-07-24 05:16:52

πŸ› οΈ Ship mode 볡합 λͺ…λ Ή νŽΈμ§‘κΈ° ν™”λ©΄ μž¬ν˜„

μ‹€μ œ μ„€μ • ν”„λ‘œκ·Έλž¨μ˜ 볡합(μ‘°ν•©) λͺ…λ Ή λͺ©λ‘ + Basic Code 상세 화면을 DB κ°’ κ·ΈλŒ€λ‘œ μž¬κ΅¬μ„±ν•œ ν™”λ©΄μž…λ‹ˆλ‹€. Write κ°€μ΄λ“œμ—μ„œ μ„€μ • 방법을 ν™•μΈν•˜μ„Έμš”.

볡합 λͺ…λ Ή λͺ©λ‘ TB_UNION_CODE_MST Β· μΉ©μ…‹ 23

#UNION_ID이름Hexλͺ…λ Ήμˆ˜μ“°κΈ°μˆ˜λ³€ν™˜μ‹μˆ˜μ •μΌ
1 1 FET CDP(off,on,off)_CHA 01 3 2 β€” 20140704192116
2 2 FET CDP(on,off,off)_CHA 02 3 2 β€” 20140704192117
3 3 FET CDP(off,on,off)_DCHA 03 10 7 β€” 20150302144013
4 4 FET CDP(on,off,off)_DCHA 04 5 4 β€” 20150225142353
5 5 Fuse Blow MPU 05 7 4 β€” 20140920134411
6 6 Check PCM Power 06 2 1 β€” 20100703190534
7 9 RCA(sony_10mAh) 07 3 2 β€” 20140312190114
8 10 Store RAM Data 08 3 2 β€” 20140312190114
9 11 LED Check 09 6 3 β€” 20140312190114
10 12 Voltage Difference(Bank1) 0A 2 0 J(/(1,?(S)))(2) 20140312190133
11 13 Voltage Difference(Bank2) 0B 2 0 J(/(1,?(S)))(2) 20140312190156
12 15 Voltage Difference(Bank3) 0C 2 0 J(/(1,?(S)))(2) 20140312190156
13 16 Voltage Difference(Bank4) 0D 2 0 J(/(1,?(S)))(2) 20140312190156
14 17 Pack Voltage(DVM) 0E 3 2 β€” 20140312190114
15 18 Voltage Pack(DVM-SMBus) 0F 2 0 #(1,2) 20140312190211
16 19 Temperature(Pack) 10 2 0 J((?27))(2) 20140922134407
17 21 Write Device Name 11 9 6 β€” 20140312190241
18 22 Mid-Tab 12 1 0 MIDTAB(11,12,13,14,15,16,17,18,19,20) 20140922132452
19 23 Full Charge Capacity(10mWh) 13 3 2 β€” 20140312190241
20 24 Seal 14 1 1 β€” 20140312190241
21 25 Unseal 15 4 4 β€” 20140312190241
22 26 FET CDP(off.off.on)_CHA 16 3 2 β€” 20140704192118
23 27 FET CDP(off.off.on)_DCHA 17 3 2 β€” 20140312190257
24 28 PCM Manufacture Date(SBData) 18 16 15 β€” 20140312190241
25 29 PCM Serial Number(SBData) 19 16 15 β€” 20140312190241
26 32 Ship mode 1A 7 7 β€” 20140312190459
27 33 Temperature (Fix) 1B 1 0 (?27) 20140922134415
28 34 Check Dchg(tango) 1C 8 1 (1) 20140728194802
29 35 FET CDP(off,on,off)_Charge(tango) 1D 3 2 β€” 20140312190459
30 36 FET CDP(on,off,off)_Charge(tango) 1E 3 2 β€” 20140312190459
31 37 FET CDP(off.off.on)_Charge(tango) 1F 3 2 β€” 20140312190459
32 39 Write CT Label 20 3 2 (1) 20140312190459
33 40 PCM Manufacture Date(SBData) Tango 21 16 15 β€” 20140312190459
34 41 PCM Serial Number(SBData) Tango 22 16 15 β€” 20140312190459
35 44 Pack Voltage(DVM) Tosiba 23 1 0 β€” 20140312190548
36 46 Cancel active 24 14 14 β€” 20140704191834
37 48 Voltage Deviation(MaxV-MinV) 25 4 0 #(1,2,3,4) 20140922134912
38 49 Check Shutdown switch 26 4 3 β€” 20140704191834
39 51 Read CT Label(Data) 27 6 1 (1) 20140704191834
40 52 Ship mode 28 2 2 β€” 20140704191834
41 53 Full Charge Capacity(BPS_10mWh) 29 3 2 β€” 20140704191834
42 54 FET CD (On,On) 2A 6 6 β€” 20150131162722
43 55 Clear PF 2B 4 4 β€” 20140920133818
44 56 Current Sum 2C 2 0 -(1,2) 20140920142632
45 57 Bank 1 IR 2D 3 0 *(/(#(1,2),3),?(1000)) 20140920155219
46 58 Bank 2 IR 2E 3 0 *(/(#(1,2),3),?(1000)) 20140920155220
47 59 Bank 3 IR 2F 3 0 *(/(#(1,2),3),?(1000)) 20140920155220
48 60 Bank 4 IR 30 3 0 *(/(#(1,2),3),?(1000)) 20140920155220
49 61 Mid_tab_test D 31 4 0 #(1,2,3,4) 20140920143304
50 62 IR-DCR 32 10 2 -(*(/(-(1,3),-(2,4)),(?1000)),(?0)) 20140922140450

Basic Code (상세 μŠ€ν…) TB_UNION_CODE_DTL Β· #32 Ship mode

순번Basic CodeCmdAddr ClassUnitTypeJudge DataPlaceSizeμˆ˜ν–‰(ACTION_YN)λ³€ν™˜μ‹
1 [9] Write Word 60 40 1Write 1Word 1HEX 6None 0080 00 00 N β€”
2 [20] Delay 80 00 4Other 0Delay Nν•΄λ‹Ήμ—†μŒ 6None 100 00 00 N β€”
3 [9] Write Word 60 40 1Write 1Word 1HEX 6None 0080 00 00 N β€”
4 [20] Delay 80 00 4Other 0Delay Nν•΄λ‹Ήμ—†μŒ 6None 100 00 00 N β€”
5 [9] Write Word 60 40 1Write 1Word 1HEX 6None 0B0A 00 00 N β€”
6 [20] Delay 80 00 4Other 0Delay Nν•΄λ‹Ήμ—†μŒ 6None 100 00 00 N β€”
7 [9] Write Word 60 40 1Write 1Word 1HEX 6None 0908 00 00 N β€”

μ‹€μ œ ν™”λ©΄Β·λ°μ΄ν„°λ‘œ ν™•μΈλœ κ°’    데이터 μƒκ΄€κ΄€κ³„λ‘œ μΆ”μ •ν•œ κ°’ (λ―Έν™•μ •)    아직 의미λ₯Ό ν™•μΈν•˜μ§€ λͺ»ν•œ κ°’