πŸ”‹ SBT.mdb λ·°μ–΄
데이터 κΈ°μ€€: 2026-07-24 05:16:52

TB_TEST_ITEM

칩셋별 검사 ν•­λͺ©(μΈ‘μ • ν•­λͺ©) μ •μ˜

κΈ°λ³Έν‚€: CHIPSET_ID + ITEM_ID + TEST_CLASS_ID + ITEM_SEQ

검색 κ²°κ³Ό 3,798ν–‰ 쀑 751–800ν–‰ ν‘œμ‹œ (16/76 νŽ˜μ΄μ§€)
CHIPSET_ID πŸ”‘ ITEM_ID πŸ”‘ TEST_CLASS_ID πŸ”‘ ITEM_SEQ πŸ”‘ ITEM_NAME ITEM_UNIT CODE_TYPE UNION_ID BASIC_ID SUB_COMMAND CODE_DEFINE WRITE_ID WRITE_DATA CONVERT_VALUE TEMP_STORAGE MODIFY_PERSON MODIFY_DATE
23 (R2J24020) 268 2 100 Check soft version 5 β€” B 0 1 FF NNNN0000 0 β€” β€” 0 Thanh 20140509145551
23 (R2J24020) 269 2 101 Check soft version 6 β€” B 0 1 FF NNNN0000 0 β€” β€” 0 Thanh 20140509145551
23 (R2J24020) 270 2 102 Check Project No β€” B 0 1 FF NNNN0000 0 β€” β€” 0 Thanh 20140509145551
23 (R2J24020) 271 2 103 PackLine_W1 β€” B 0 1 FF NNNN0000 0 β€” β€” 0 Thanh 20140726163231
23 (R2J24020) 272 2 104 PackRev_W1 β€” B 0 1 FF NNNN0000 0 β€” β€” 0 Thanh 20140726163231
23 (R2J24020) 273 2 105 Enable Discharge β€” B 0 1 FF NNNN0000 0 β€” β€” 0 Thanh 20140726163231
23 (R2J24020) 274 2 106 Mid Tab Test (5S) β€” B 0 1 FF 4NN00000 0 β€” β€” 0 Thanh 20140509145551
23 (R2J24020) 275 2 107 Cell1_Volt_OCV_4S β€” B 0 1 FF 4NN00000 0 β€” β€” 0 Thanh 20140703194443
23 (R2J24020) 276 2 108 Cell2_Volt_OCV_4S β€” B 0 1 FF 4NN00000 0 β€” β€” 0 Thanh 20140703194443
23 (R2J24020) 277 2 109 Cell3_Volt_OCV_4S β€” B 0 1 FF 4NN00000 0 β€” β€” 0 Thanh 20140703194443
23 (R2J24020) 278 2 110 Cell4_Volt_OCV_4S β€” B 0 1 FF 4NN00000 0 β€” β€” 0 Thanh 20140703194443
23 (R2J24020) 279 2 111 Charge_DVM_4S β€” B 0 1 FF 4NN00000 0 β€” β€” 0 Thanh 20140703195454
23 (R2J24020) 280 2 112 Checksum (Flash Rom)_80IC byte B 0 7 79 03100102 0 β€” β€” 0 Thanh 20140704160842
23 (R2J24020) 281 2 113 Checksum (Selected Area)_80IC byte B 0 7 79 03100302 0 β€” β€” 0 Thanh 20140704160842
23 (R2J24020) 282 2 114 PCM F/W Version_80IC byte B 0 7 78 02100401 0 β€” β€” 0 Thanh 20140704174937
222 (BQ40Z453) 25 2 18 Voltage Pack (SMBus) mV B 0 6 09 01310000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 39 2 19 Check FET(on,on) word B 0 7 54 02100102 0 β€” β€” 0 Thuy 20140913172240
222 (BQ40Z453) 41 2 20 Manufacturing Status β€” B 0 7 57 03100000 0 β€” β€” 0 Thuy 20140913090752
222 (BQ40Z453) 42 2 21 Cycle Count β€” B 0 6 17 01510000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 43 2 22 FCC (mAh) mAh B 0 6 10 01210000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 44 2 23 RSOC % B 0 6 0D 01510000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 45 2 24 At Rate β€” B 0 6 04 01510000 0 β€” β€” 0 Thuy 20140906104808
222 (BQ40Z453) 46 2 25 Charging Current mA B 0 6 14 01210000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 47 2 26 Charging Voltage mV B 0 6 15 01310000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 48 2 27 Design Capacity mAh B 0 6 18 01210000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 49 2 28 RCA 10mAh B 0 6 01 01210000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 50 2 29 RTA min B 0 6 02 01510000 0 β€” β€” 0 Thuy 20140905163249
222 (BQ40Z453) 64 2 30 Delay β€” B 0 20 00 40N60000 0 β€” β€” 0 Thuy 20140906111218
222 (BQ40Z453) 69 2 31 Check FET(Off,Off) β€” B 0 7 54 03100102 0 β€” β€” 0 Thuy 20140913172513
222 (BQ40Z453) 70 2 32 Pack Terminal Voltage mV B 0 43 00 20110000 0 β€” β€” 0 Thanh 20140915102350
222 (BQ40Z453) 107 2 33 Enable FET Control (Bq40Z453)_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 108 2 34 FET CD(on,off)_DCHA_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 109 2 35 FET CD(off,off)_DCHA_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 110 2 36 FET CDP(off,off,on)_CHA_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 111 2 37 FET CDP(off,off,off)_CHA_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 112 2 38 FET CD(off,on)_CHA_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 113 2 39 FET CD(off,off)_CHA_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 114 2 40 Disable FET Control (Bq40z453)_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 115 2 41 FET Discharge On(SI)_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 116 2 42 FET Discharge Off(SI)_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 117 2 43 FET Charge On(SI)_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 118 2 44 FET Charge Off(SI)_ β€” B 0 52 00 4NN60000 0 β€” β€” 0 Dao Xuan Thuy 20150602120251
222 (BQ40Z453) 119 2 45 Voltage (Bank 3) mV B 0 6 3D 01310000 0 β€” β€” 3 Dao Xuan Thuy 20150608091423
222 (BQ40Z453) 120 2 46 Voltage (Bank 4) mV B 0 6 3C 01310000 0 β€” β€” 4 Dao Xuan Thuy 20150608091423
222 (BQ40Z453) 124 2 47 Device Chemistry β€” B 0 7 22 02000000 0 β€” β€” 0 Dao Xuan Thuy 20150629173130
222 (BQ40Z453) 125 2 48 PCM DF Version (Nobel test) word B 0 7 70 03102002 0 β€” β€” 0 Dinh TC 20151202095730
222 (BQ40Z453) 126 2 49 PCM Manufacture ID(nobel test) β€” B 0 7 70 0NN00019 0 β€” β€” 0 Dinh TC 20151202095731
23 (R2J24020) 283 2 115 PCM DF Version_80IC byte B 0 7 78 02100601 0 β€” β€” 0 Thanh 20140704174937
23 (R2J24020) 284 2 116 PCM Manufacture Date_80IC yyyymmdd B 0 7 78 03640902 0 β€” β€” 0 Thanh 20140704190541
23 (R2J24020) 285 2 117 PCM Serial Number_80IC num B 0 7 78 03511102 0 β€” β€” 0 Thanh 20140704190541