πŸ”‹ SBT.mdb λ·°μ–΄
데이터 κΈ°μ€€: 2026-07-24 05:16:52

TB_TEST_ITEM

칩셋별 검사 ν•­λͺ©(μΈ‘μ • ν•­λͺ©) μ •μ˜

κΈ°λ³Έν‚€: CHIPSET_ID + ITEM_ID + TEST_CLASS_ID + ITEM_SEQ

검색 κ²°κ³Ό 3,798ν–‰ 쀑 951–1,000ν–‰ ν‘œμ‹œ (20/76 νŽ˜μ΄μ§€)
CHIPSET_ID πŸ”‘ ITEM_ID πŸ”‘ TEST_CLASS_ID πŸ”‘ ITEM_SEQ πŸ”‘ ITEM_NAME ITEM_UNIT CODE_TYPE UNION_ID BASIC_ID SUB_COMMAND CODE_DEFINE WRITE_ID WRITE_DATA CONVERT_VALUE TEMP_STORAGE MODIFY_PERSON MODIFY_DATE
222 (BQ40Z453) 62 1 18 FET Charge On(SI) β€” B 0 26 21 21060000 0 β€” β€” 0 Thuy 20140906093639
222 (BQ40Z453) 63 1 19 FET Charge Off(SI) β€” B 0 25 20 21160000 0 β€” β€” 0 Thuy 20140913175633
222 (BQ40Z453) 71 1 20 Unseal Hex U 17 0 10 3NN10000 0 β€” β€” 0 Thanh 20140912173450
222 (BQ40Z453) 72 1 21 Temperature (Pack) 'C U 18 0 11 3NN40000 0 β€” β€” 30 1 20180914091752
222 (BQ40Z453) 73 1 22 Disable FET Control (Bq40z453) β€” U 20 0 13 3NN10000 0 β€” β€” 0 Dao Xuan Thuy 20150602120350
222 (BQ40Z453) 74 1 23 Enable FET Control (Bq40z453) β€” U 19 0 12 3NN10000 0 β€” β€” 0 Dao Xuan Thuy 20150602120350
222 (BQ40Z453) 75 1 24 FET CD(off,off) β€” U 21 0 14 3NN10000 0 β€” β€” 0 Dao Xuan Thuy 20150602120332
222 (BQ40Z453) 76 1 25 FET CD(off,off)_ CHA β€” U 23 0 16 3NN10000 0 β€” β€” 0 Dao Xuan Thuy 20150602120332
222 (BQ40Z453) 77 1 26 FET CD(off,off)_DCHA β€” U 22 0 15 3NN10000 0 β€” β€” 0 Dao Xuan Thuy 20150602120332
222 (BQ40Z453) 78 1 27 FET CDP(off,off,off)_CHA β€” U 24 0 17 3NN10000 0 β€” β€” 0 Dao Xuan Thuy 20150602120332
222 (BQ40Z453) 79 1 28 Shut Down β€” U 25 0 18 3NN10000 0 β€” β€” 0 Dao Xuan Thuy 20150602140526
222 (BQ40Z453) 80 1 29 Voltage CHA(Bank 1) β€” B 0 6 3F 01360000 0 β€” β€” 11 Dao Xuan Thuy 20150602120616
23 (R2J24020) 294 1 117 Charge On (SI) β€” B 0 28 31 21060000 0 β€” β€” 0 Hoi 20140922114348
23 (R2J24020) 295 1 118 Charge Off (SI) β€” B 0 27 30 21160000 0 β€” β€” 0 Hoi 20140922114348
23 (R2J24020) 296 1 119 Discharge On (SI) β€” B 0 38 31 22060000 0 β€” β€” 0 Hoi 20140922114348
23 (R2J24020) 297 1 120 Discharge Off (SI) β€” B 0 37 30 22160000 0 β€” β€” 0 Hoi 20140922114348
281 (BQ30420C(EEPROM 0x63)) 89 3 1 0x58 β€” B 0 7 58 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 90 3 2 0x59 β€” B 0 7 59 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 91 3 3 0x5A β€” B 0 7 5A 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 92 3 4 0x5B β€” B 0 7 5B 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 93 3 5 0x5C β€” B 0 7 5C 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 94 3 6 0x5D β€” B 0 7 5D 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 95 3 7 0x5E β€” B 0 7 5E 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 96 3 8 0x5F β€” B 0 7 5F 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 97 3 9 0x60 β€” B 0 7 60 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 98 3 10 0x61 β€” B 0 7 61 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 99 3 11 0x62 β€” B 0 7 62 0210000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 100 3 12 0x63 β€” B 0 7 63 02100000 0 β€” β€” 0 xinhua yin 20111206111222
281 (BQ30420C(EEPROM 0x63)) 43 2 1 Manufacturer Access hex B 0 6 00 01100000 0 β€” β€” 0 xinhua yin 20111206111155
281 (BQ30420C(EEPROM 0x63)) 44 2 2 RCA 10mWh B 0 6 01 01500000 0 β€” β€” 0 xinhua yin 20111206111155
281 (BQ30420C(EEPROM 0x63)) 45 2 3 RTA min B 0 6 02 01500000 0 β€” β€” 0 xinhua yin 20111206111155
281 (BQ30420C(EEPROM 0x63)) 46 2 4 Battery Mode hex B 0 6 03 01100000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 47 2 5 At Rate mA B 0 6 04 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 48 2 6 AtRate(Full) min B 0 6 05 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 49 2 7 AtRate(Empty) min B 0 6 06 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 50 2 8 AtRate(OK) β€” B 0 6 07 01100000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 51 2 9 Temperature '''C B 0 6 08 01410000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 52 2 10 Voltage Pack (SMBus) mV B 0 6 09 01310000 0 β€” β€” 0 LIM 20140308163759
281 (BQ30420C(EEPROM 0x63)) 54 2 11 Average Current mA B 0 6 0B 01210000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 55 2 12 Max Error % B 0 6 0C 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 56 2 13 RSOC % B 0 6 0D 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 58 2 14 RC mWh B 0 6 0F 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 59 2 15 FCC (mAh) mWh B 0 6 10 01510000 0 β€” β€” 0 wenqi bian 20120605133347
281 (BQ30420C(EEPROM 0x63)) 63 2 16 Charging Current mA B 0 6 14 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 64 2 17 Charging Voltage mV B 0 6 15 01510000 0 β€” β€” 0 xinhua yin 20111206111156
281 (BQ30420C(EEPROM 0x63)) 65 2 18 Battery Status hex B 0 6 16 01100000 0 β€” β€” 0 xinhua yin 20111206111156
341 (BQ20Z65) 65 1 10 FET Charge On(SI) β€” B 0 26 21 21060000 0 β€” β€” 0 LIM 20140311090627
341 (BQ20Z65) 66 1 11 FET Charge Off(SI) β€” B 0 25 20 21160000 0 β€” β€” 0 LIM 20140311090627
341 (BQ20Z65) 67 1 12 FET Discharge On(SI) β€” B 0 36 21 22060000 0 β€” β€” 0 LIM 20140311090627
341 (BQ20Z65) 68 1 13 FET Discharge Off(SI) β€” B 0 35 20 22160000 0 β€” β€” 0 LIM 20140311090627